FET Chip

Super Lower Noise GaAs FETs ( Gallium Arsenide Field Effect Transistor )

Jan-21-2021 updated.

Super Lower Noise GaAs FETs ( Gallium Arsenide Field Effect Transistor )
Product No. Freq.
(GHz)
N.F.(dB) P-1dB(dBm) Gain(dB) S-Parameters Notes
TC1101 0.1-40 0.5 @12GHz 18.5 12 @12GHz 2V10mA;4V25mA Chip
TC1101V 0.1-40 0.5 @12GHz 18.5 13 @12GHz Chip / With Via Hole
TC1102 0.1-40 0.5 @12GHz 13 @12GHz 2V10mA Chip
TC1106 0.1-40 0.35@12GHz 14.5 @12GHz 2V10mA Chip
TC1201 0.1-40 0.5 @12GHz 21.5 12 @12GHz 4V25mA;6V40mA Chip
TC1201V 0.1-40 0.5 @12GHz 21.5 12 @12GHz 6V40mA;4V25mA Chip / With Via Hole
TC1202 0.1-40 0.5 @12GHz 12 @12GHz 4V25mA Chip
TC1301 0.1-40 0.8 @12GHz 24.5 10 @12GHz 4V50mA;6V80mA Chip
TC1301V 0.1-40 0.8 @12GHz 24.5 10 @12GHz Chip / With Via Hole
TC1304 0.1-40 0.8 @12GHz 24.5 10 @12GHz 6V80mA;4V50mA Chip / With Via Hole
TC1304V 0.1-40 0.8 @12GHz 10 @12GHz 4V50mA;6V80mA Chip / With Via Hole

Remark:

1. Specifications are the typical value.
2. P-1dB : Output Power at 1dB Gain Compression Point
.

 

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