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High Linearity and High Efficiency GaAs Power FETs

High Linearity and High Efficiency GaAs Power FETs
Product No.	Freq. (GHz)	P-1dB(dBm)	Gain(dB)	IP3(dBm)	PAE(%)	S-Parameters	Notes
TC1401	0.1-20	27	9 @12GHz	37	40	8V150mA
TC1401N	0.1-20	27	9 @12GHz	37	40	8V150mA
TC1404N	0.1-20	27	11 @12GHz	37	40
TC1501	0.1-20	30	13 @6GHz	40	43	8V300mA
TC1501N	0.1-20	30	12 @6GHz	40	43	8V300mA
TC1504N	0.1-20	30	9 @12GHz	40	43	8V240mA
TC1601	0.1-15	33	12 @6GHz	43	43		Chip / Short Gate Length
TC1606	0.1-15	33	12 @6GHz	43	43	8V600mA	Chip / Long Gate Length
TC1606N	0.1-15	33	8 @6GHz	43	43		Chip / Non-Via Hole
TC1706	0.1-15	34.8	11 @6GHz	45	43	8V900mA	Chip
TC1801	0.1-15	36.5	10 @6GHz	47	40		Chip / Short Gate Length
TC1806	0.1-15	36.5	10 @6GHz	47	40	8V1300mA	Chip / Long Gate Length

Remark:

1. Specifications are the typical value.
2. P-1dB : Output Power at 1dB Gain Compression Point.

 

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