PRODUCTS

FET Chip

Super Lower Noise GaAs FETs ( Gallium Arsenide Field Effect Transistor )

Super Lower Noise GaAs FETs ( Gallium Arsenide Field Effect Transistor )
Product No.	Freq. (GHz)	N.F.(dB)	P-1dB(dBm)	Gain(dB)	S-Parameters	Notes
TC1101	0.1-40	0.5 @12GHz	18.5	12 @12GHz	2V10mA;4V25mA	Chip
TC1101V	0.1-40	0.5 @12GHz	18.5	13 @12GHz		Chip / With Via Hole
TC1102	0.1-40	0.5 @12GHz		13 @12GHz	2V10mA	Chip
TC1106	0.1-40	0.35@12GHz		14.5 @12GHz	2V10mA	Chip
TC1201	0.1-40	0.5 @12GHz	21.5	12 @12GHz	4V25mA;6V40mA	Chip
TC1201V	0.1-40	0.5 @12GHz	21.5	12 @12GHz	6V40mA;4V25mA	Chip / With Via Hole
TC1202	0.1-40	0.5 @12GHz		12 @12GHz	4V25mA	Chip
TC1301	0.1-40	0.8 @12GHz	24.5	10 @12GHz	4V50mA;6V80mA	Chip
TC1301V	0.1-40	0.8 @12GHz	24.5	10 @12GHz		Chip / With Via Hole
TC1304	0.1-40	0.8 @12GHz	24.5	10 @12GHz	6V80mA;4V50mA	Chip / With Via Hole
TC1304V	0.1-40	0.8 @12GHz		10 @12GHz	4V50mA;6V80mA	Chip / With Via Hole

Remark:

1. Specifications are the typical value.
2. P-1dB : Output Power at 1dB Gain Compression Point.

 

FET Chip PRODUCTS SELECTION GUIDE (DOWNLOAD PDF)