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Jan-21-2021 updated.
Super Lower Noise GaAs FETs ( Gallium Arsenide Field Effect Transistor )
Product No.
Freq.
(GHz)
N.F.(dB)
P-1dB(dBm)
Gain(dB)
S-Parameters
Notes
TC1101
0.1-40
0.5 @12GHz
18.5
12 @12GHz
2V10mA
;
4V25mA
Chip
TC1101V
0.1-40
0.5 @12GHz
18.5
13 @12GHz
Chip / With Via Hole
TC1102
0.1-40
0.5 @12GHz
13 @12GHz
2V10mA
Chip
TC1106
0.1-40
0.35@12GHz
14.5 @12GHz
2V10mA
Chip
TC1201
0.1-40
0.5 @12GHz
21.5
12 @12GHz
4V25mA
;
6V40mA
Chip
TC1201V
0.1-40
0.5 @12GHz
21.5
12 @12GHz
6V40mA
;
4V25mA
Chip / With Via Hole
TC1202
0.1-40
0.5 @12GHz
12 @12GHz
4V25mA
Chip
TC1301
0.1-40
0.8 @12GHz
24.5
10 @12GHz
4V50mA
;
6V80mA
Chip
TC1301V
0.1-40
0.8 @12GHz
24.5
10 @12GHz
Chip / With Via Hole
TC1304
0.1-40
0.8 @12GHz
24.5
10 @12GHz
6V80mA
;
4V50mA
Chip / With Via Hole
TC1304V
0.1-40
0.8 @12GHz
10 @12GHz
4V50mA
;
6V80mA
Chip / With Via Hole
May-03-2019 updated.
High Linearity and High Efficiency GaAs Power FETs
Product No.
Freq.
(GHz)
P-1dB(dBm)
Gain(dB)
IP3(dBm)
PAE(%)
S-Parameters
Notes
TC1401
0.1-20
27
9 @12GHz
37
40
8V150mA
TC1401N
0.1-20
27
9 @12GHz
37
40
8V150mA
TC1404N
0.1-20
27
11 @12GHz
37
40
TC1501
0.1-20
30
13 @6GHz
40
43
8V300mA
TC1501N
0.1-20
30
12 @6GHz
40
43
8V300mA
TC1504N
0.1-20
30
9 @12GHz
40
43
8V240mA
TC1601
0.1-15
33
12 @6GHz
43
43
Chip / Short Gate Length
TC1606
0.1-15
33
12 @6GHz
43
43
8V600mA
Chip / Long Gate Length
TC1606N
0.1-15
33
8 @6GHz
43
43
Chip / Non-Via Hole
TC1706
0.1-15
34.8
11 @6GHz
45
43
8V900mA
Chip
TC1801
0.1-15
36.5
10 @6GHz
47
40
Chip / Short Gate Length
TC1806
0.1-15
36.5
10 @6GHz
47
40
8V1300mA
Chip / Long Gate Length
Remark:
1. Specifications are the typical value.
2. P-1dB : Output Power at 1dB Gain Compression Point
.
FET Chip Products Selection Guide