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Mar-02-2018 updated.

Super Lower Noise GaAs FETs ( Gallium Arsenide Field Effect Transistor )

Product No. Freq.
(GHz)		 N.F.(dB) P-1dB(dBm) Gain(dB) S-Parameters Notes
TC1101 0.1-40 0.5 @12GHz 18.5 12 @12GHz 2V10mA;4V25mA Chip
TC1101V 0.1-40 0.5 @12GHz 18.5 13 @12GHz Chip / With Via Hole
TC1102 0.1-40 0.5 @12GHz 13 @12GHz 2V10mA Chip
TC1201 0.1-40 0.5 @12GHz 21.5 12 @12GHz 4V25mA;6V40mA Chip
TC1201V 0.1-40 0.5 @12GHz 21.5 12 @12GHz 6V40mA;4V25mA Chip / With Via Hole
TC1202 0.1-40 0.5 @12GHz 12 @12GHz 4V25mA Chip
TC1301 0.1-40 0.8 @12GHz 24.5 10 @12GHz 4V50mA;6V80mA Chip
TC1301V 0.1-40 0.8 @12GHz 24.5 10 @12GHz Chip / With Via Hole
TC1304 0.1-40 0.8 @12GHz 24.5 10 @12GHz 6V80mA;4V50mA Chip / With Via Hole
TC1304V 0.1-40 0.8 @12GHz 10 @12GHz 4V50mA;6V80mA Chip / With Via Hole

May-03-2019 updated.

High Linearity and High Efficiency GaAs Power FETs

Product No. Freq.
(GHz)		 P-1dB(dBm) Gain(dB) IP3(dBm) PAE(%) S-Parameters Notes
TC1401 0.1-20 27 9 @12GHz 37 40 8V150mA
TC1401N 0.1-20 27 9 @12GHz 37 40 8V150mA
TC1404N 0.1-20 27 11 @12GHz 37 40
TC1501 0.1-20 30 13 @6GHz 40 43 8V300mA
TC1501N 0.1-20 30 12 @6GHz 40 43 8V300mA
TC1504N 0.1-20 30 9 @12GHz 40 43 8V240mA
TC1601 0.1-15 33 12 @6GHz 43 43 Chip / Short Gate Length
TC1606 0.1-15 33 12 @6GHz 43 43 8V600mA Chip / Long Gate Length
TC1606N 0.1-15 33 8 @6GHz 43 43 Chip / Non-Via Hole
TC1706 0.1-15 34.8 11 @6GHz 45 43 8V900mA Chip
TC1801 0.1-15 36.5 10 @6GHz 47 40 Chip / Short Gate Length
TC1806 0.1-15 36.5 10 @6GHz 47 40 8V1300mA Chip / Long Gate Length

Remark:

1. Specifications are the typical value.
2. P-1dB : Output Power at 1dB Gain Compression Point.