NOV-08-2007 updated. Super Lower Noise GaAs FETs ( Gallium Arsenide Field Effect Transistor ) Product No. 5 Freq.(GHz) 5 N.F.(dB) 5 P-1dB(dBm) 5 Gain(dB) 5 S-Parameters 5 Notes 5 High Linearity and High Efficiency GaAs Power FETs Product No. 5 Freq.(GHz) 5 P-1dB(dBm) 5 Gain(dB) 5 IP3(dBm) 5 PAE(%) 5 S-Parameters 5 Notes 5 Remark:  　　1. Specifications shown above are the typical value.  　　2. P-1dB : Output Power at 1dB Gain Compression Point. Printer-Friendly Format (pdf, 16kb) . . . Copyright © Transcom, Inc. All Rights Reserved.